The report provides statistical insights into the market status of GaN Power Devices companies, making it valuable for individuals and businesses interested in the industry. It includes historical and projected market data, demand, pricing trends, and geographic breakdowns of leading GaN Power Devices firms. The report offers a comprehensive view of the global GaN Power Devices market from 2023 to 2030.
The research report also provides comprehensive data on the key factors driving the growth of the GaN Power Devices market at both the national and local levels. It includes market size, forecasts, market share by region and segment, growth opportunities, company profiles, SWOT analysis, product portfolios, and growth strategies.
GaN material has a critical field that is 10 times higher than silicon, which allows for a much lower on-state resistance with the same voltage ratings.
The global GaN Power Devices market was valued at USD million in 2022 and is expected to reach USD million by 2029, with a CAGR during the forecast period 2023-2029. The influence of COVID-19 and the Russia-Ukraine War were considered in estimating market sizes.
In 2016, the global GaN power device market for RF power devices was dominated by the telecommunications, military, defense, and aerospace, and consumer and enterprise verticals, accounting for over 90% of the total market. RF power devices are used in various applications such as military, defense, satellite communications, radar, and electronic warfare.
Key players in the GaN Power Devices market include Fujitsu, Toshiba, Koninklijke Philips, Texas Instruments, EPIGAN, NTT Advanced Technology, RF Micro Devices, Cree Incorporated, Aixtron, International Quantum Epitaxy (IQE), Mitsubishi Chemical, AZZURO Semiconductors, Efficient Power Conversion (EPC), GaN Systems, and Infineon.
The market for GaN Power Devices is categorized based on types such as 600V and others, and applications including server and other IT equipment, high-efficiency and stable power supplies, and rapidly expanding HEV/EV devices.
The report covers major regions including North America, Europe, Asia-Pacific, Latin America, and the Middle East and Africa.
Overall, the report provides an in-depth analysis of the GaN Power Devices market, including future trends, growth drivers and challenges, regional analysis, market segments, and key technological advancements.